Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB) has installed an SR-4000HT-grade gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) reactor for its continued compound semiconductor device developmental work for deep-ultraviolet light-emitting diodes (UVC-LEDs). SSLEEC is co-directed by Nobel Prize-winning professor Shuji Nakamura and professor Steven DenBaars.
The unique design of the SR-4000HT assists in growing high-aluminium-content devices at high growth rates, while operating at pressures higher than 40kPa and elevated temperatures.
"We have already obtained preliminary growth results which demonstrate the unrivaled performance of the SR-4000HT reactor," comments Nakamura. "We look forward to using the MOCVD reactor from TNSC to grow the high-quality III-nitride-based materials and devices," he adds.
"We believe that the designed features of our reactor, which enable well controlled vapor phase reactions, will allow UCSB to enjoy a large process window to develop their devices," says TNSC's CSE Division Manager Koh Matsumoto.